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Analysis associated with electrical qualities shows that the a-SVO memristor illustrates typical bipolar resistive switching behavior. Multilevel resistance states are observed in the off-to-on and on-to-off transition processes. The retention opposition of the a-SVO memristor is proven to perhaps not dramatically change for a period of 2 × 104 s. The conduction process running within the Ag/a-SVO/Pt memristor is ascribed towards the formation of Ag-based filaments. Nonlinear neural network simulations may also be conducted to gu
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