https://www.selleckchem.com/products/gdc-0068.html
The barrier confined the filament rupture and reduced the reset variability. Reset was primarily influenced by the filament rupture and detrapping in the native oxide that facilitated smooth reset and NDR in the device. The resistive switching originated from traps in the localized states of amorphous CuO. The set process was mainly dominated by the trap-controlled space-charge-limited; this led to a transition into a Poole-Frenkel conduction. This research opens up new possibilities to improve the switching parameters and promote the
Gefällt mir
Kommentar
Teilen
