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By contrast, the regions that were in contact with the underlying metal electrodes were open, which allowed area-selective p-doping in the 2D WSe2. Our study demonstrated that the Ohmic-like behaviors obtained after area-selective UV/ozone treatment improved the electrical properties of the 2D WSe2-based FETs such as the field-effect mobility (improvement of 3-4 orders of magnitude) and current on/off ratio (improvement of five orders of magnitude), while maintaining the p-type normally-off characteristics. These results provide useful i
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