https://www.selleckchem.com/Bcl-2.html
Magnetoresistive materials are vital for the development of storage devices. Using the first-principles transport simulations with nonequilibrium Green's function calculation, we investigate the magnetoresistive properties of Ni/WSe2/Ni junctions withm-layers of WSe2(m= 1, 2, ⋯ ,6). Form≤ 2, the junctions are metallic inspite of the semiconducting nature of few-layer WSe2. However, the junctions exhibit transport gaps form 2. Interestingly, magnetoresistance of the junctions stays around 6% when there are more than one layer of WSe2in the cent
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