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Topological insulators (TIs) gained high interest due to their protected electronic surface states that allow dissipation-free electron and information transport. In consequence, TIs are recommended as materials for spintronics and quantum computing. Yet, the number of well-characterized TIs is rather limited. To contribute to this field of research, we focused on new bismuth-based subiodides and recently succeeded to synthesize a new compound Bi12Rh3Sn3I9, which is structurally closely related to Bi14Rh3I9 - a stable, layered material. I
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