https://www.selleckchem.com/
High-power silicon-based photodiodes are key components in many silicon photonics systems, such as microwave photonics systems, an optical interconnection system with multi-level modulation formats, etc. Usually, the saturation power of the silicon-germanium (Si-Ge) photodiode is limited by the space-charge screening (SCS) effect and the feasibility of the fabrication process. Here, we propose a high saturation power Si-Ge photodiode assisted by doping regulation. Through alleviating the SCS effect of the photodiode, we successfully demonstrate an 85.7% imp
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