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More to the point, with the modulation of gate current, the versatile TFTs amazingly exhibited three various device types, this is certainly, multilayer MoS2/BMN n-type TFT (device type 1), homojunction MoS2/BMN TFT (device kind 2), and dense MoS2/BMN p-type TFT (product kind 3). In certain, with different bias conditions, the homojunction TFT showed bipolarity of transfer characteristics and forward/backward rectifications of result attributes similar to p-n/n-n junctions. The high dielectric constant an
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