https://www.selleckchem.com/products/d-1553.html
Pristine, and In-, Sn-, and (In, Sn)-doped Bi2Se3 nanoplatelets synthesized on Al2O3(10 substrate by a vapor-solid mechanism in thermal CVD process via at 600 °C under 2 × 10-2 Torr. XRD and HRTEM reveal that In or Sn dopants had no effect on the crystal structure of the synthesized rhombohedral-Bi2Se3. FPA-FTIR reveals that the optical bandgap of doped Bi2Se3 was 26.3%, 34.1%, and 43.7% lower than pristine Bi2Se3. XRD, FESEM-EDS, Raman spectroscopy, and XPS confirm defects (In3+Bi3+), (In3+V, (Sn4+Bi3+), (V0Bi3+), and (Sn2+Bi3+). Ph
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