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1 V Å-1, the system begins to transform from type-II to type I. Therefore, by adding a gate voltage the bandgap and band alignment of this system can be controlled. The photovoltaic and photoelectric properties can be integrated in one device based on this heterostructure.The chemical and structural characteristics of a low-dimensional Au-Si surface alloy are presented in this work. Alloy formation was obtained by deposition of a sub-monolayer Si on Au(11. This preliminary phase to Si nano-ribbons is being investigated, as the transi
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