https://www.selleckchem.com/pr....oducts/2-Methoxyestr
A radical anion based functionalization of the basal plane of hexagonal boron nitride (h-BN) and other two-dimensional (2D) materials is proposed in the present study. The resulting materials can reversibly be oxidized without the detachment of the functional groups from the basal plane and can thus serve as surface-intercalation type cathode electroactive species and fast solid ion conductors at the same time. The functionalization of h-BN with [·OBX3]-radical anions (X=F,Cl) in the presence of Li, Na or Mg cations pro
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