https://www.selleckchem.com/pr....oducts/bay-2416964.h
Hot electron photodetectors based on a planar structure of metal-insulator /semiconductor-metal (MIM/MSM) have attracted much attention due to the easy and cheap fabrication process and the possibility of detecting light with energy lower than the semiconductor band gap. For this type of device, however, hot electron photocurrent is restricted by the trade-off between the light absorption and the internal quantum efficiency (IQE) since high absorption usually occurs within thick metals and the IQE in this case is usually low. The tr
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