https://www.selleckchem.com/
Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large bandgap for broadband low-loss operation. However, its full potential for record-strength nonlinear interactions is only released when the semiconductor is embedded within a dielectric cladding to produce highly confining waveguides. From simulations of such, we present second- and third-order pair generation that could improve
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