https://www.selleckchem.com/pr....oducts/reparixin-rep
High-quality, ultrathin 2D-MoS2 layers with large area were grown on SiO2/Si substrates by using atmospheric pressure chemical vapor deposition (APCVD) at elevated temperatures. The growth precursors (MoO3 and S) were placed separately inside the double-zone furnace to control the growth parameters individually for better flexibility in the growth process. In this study, it was found that the shape and edge structure of the evolved MoS2 flakes were significantly influenced by the chemical potential of the Mo and S precursor
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