https://www.selleckchem.com/products/ezm0414.html
A new fabrication process is developed for growing Bi2Se3 topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures first Bi2Se3 nanowires/nanobelts are deposited by standard catalyst free vapour-solid deposition on different substrates positioned inside a quartz tube. Then, the Bi2Se3, stuck on the inner surface of the quartz tube, is re-evaporated and deposited in the form of ultra-thin films on new substrates at a temperature below 100 °C, which is of relevance for flexi
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