https://www.selleckchem.com/pr....oducts/acetylcystein
20m0to 0.59m0for electron and 0.21m0to 0.52m0for hole, which ensures the enhanced transport properties of GeSe based electronic devices. Moreover, when Ge is substituted with group V dopants, a magnetic moment is introduced in an otherwise non-magnetic GeSe monolayer. The optical absorption coefficient of the doped structures can be significantly improved (2×) in the visible and infrared regions. These intriguing results would encourage the applications of doped GeSe monolayer in next-generation electronic, optoelectronic and
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