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In this study, by inserting a buffer layer of TiOx between the SiOxAg layer and the bottom electrode, we have developed a memristor device with a simple structure of Ag/SiOxAg/TiOx/p++-Si by a physical vapor deposition process, in which the filament growth and rupture can be efficiently controlled during analog switching. The synaptic characteristics of the memristor device with a wide range of resistance change for weight modulation by implementing positive or negative pulse trains have been investigated extensively. Several learning
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